Etching (microfabrication) - Wikipedia
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer …
The basic etching mechanism in the isotropic etching of Si is divided into the oxidation of silicon using nitric acid and the etching of the oxide constantly formed on the surface from this with …
A comprehensive review on convex and concave corners in silicon …
2015年5月27日 · Two-step etching method is employed for the fabrication of perfect convex corners. Since the perfectly sharp convex corner is formed by the intersection of {111} planes, …
Intersection of {111} planes can cause self-limiting etch. If there is no chemical reaction at all, the technique is called ion milling.
KOH etching is a well-documented anisotropic Si etch process. The process most often takes advantage of the etching ratio between the crystal planes in the silicon lattice. The sidewalls of …
The (110) plane is the fastest etching primary surface. The ideal (110) surface has a more corrugated atomic structure than the (100) and (111) primary surfaces. The (111) plane is an …
The degree of anisotropy (= etch rate selectivity between different crystal planes), the etch rates, and the etching homogeneity depend on the etching temperature, atomic defects in the silicon …
High speed silicon wet anisotropic etching for applications in bulk ...
2021年2月22日 · Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications in the field of microelectromechanical …
Most often KOH and TMAH etches are used to etch the (100) plane, forming the membranes, V-grooves and other structures. The side walls of the etch are defined
Potassium Hydroxide (KOH) is an alkali hydroxide used in an anisotropic wet-etch technique and is one of the most commonly used silicon etch chemistries for micromachining silicon wafers. …