Dynamic random-access memory - Wikipedia
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.
DRAM capacitors are summarized from structural and material/process perspectives, and the future direction of DRAM capacitor development is discussed. Atomic layer deposition (ALD) is a key technique that enables the growth of functional …
Atomic layer deposition of high-k and metal thin films for high ...
2024年8月1日 — DRAM capacitors are composed of metal–insulator–metal thin films. In this review, we summarize experimental methods for development of high-k insulators and metal thin films for DRAM capacitors using the atomic layer deposition (ALD) process.
动态随机存储器 - 维基百科，自由的百科全书
动态随机存储器，又称动态RAM [1] （ dynamic random-access memory, DRAM，台湾作動態隨機存取記憶體），是一种半导体 存储器，通常被用作主存储器，用於存儲運行中的程式和數據。
Introduction to DRAM (Dynamic Random-Access Memory)
2019年8月1日 — The fundamental storage cell within DRAM is composed of two elements: a transistor and a capacitor. When a bit needs to be put in memory, the transistor is used to charge or discharge the capacitor. A charged capacitor represents a logic high, or '1', while a discharged capacitor represents a logic low, or '0'.
DRAM TUTORIAL ISCA 2002 Bruce Jacob David Wang University of Maryland first off -- what is DRAM? an array of storage elements (capacitor-transistor pairs) “DRAM” is an acronym (explain) why “dynamic”? - capacitors are not perfect ... need recharging - very dense parts; very small; capactiros have very little charge ... thus, the bit ...
(a) Summary of dynamic random-access memory (DRAM) capacitor …
Dynamic random-access memory (DRAM) is the main memory in most current computers. The excellent scalability of DRAM has significantly contributed to the development of...
DRAM: Dynamic Random Access Memory - Semiconductor …
2024年9月17日 — Dynamic random access memory (DRAM) stores data in a capacitor. These capacitors leak charge so the information fades unless the charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as …
The emergence of dynamic random access memory (DRAM) in the 1970s had a huge impact on the future of digital computing. Its inventor, Robert H. Dennard, explains how the drive for simplicity led...
Toward Advanced High- k and Electrode Thin Films for DRAM Capacitors ...
2022年10月26日 — Atomic layer deposition (ALD) is a key technique that enables the growth of functional thin films for DRAM capacitors; thus, recent advances in the deposition of high-k and electrode thin films grown using the ALD technique are addressed.