Stanford researchers have created a new method to improve MoS2 transistors by adding strain using silicon nitride layers, ...

Neutron Bragg-dip imaging effectively revealed grain boundaries and crystal imperfections, while the time-of-flight method provided spatial variation in carrier mobility. Image Credit: Andrei Armiagov ...

The manipulation of mechanical strain in materials, also known as strain engineering, has allowed engineers to advance ...

This module introduces you to currents in semiconductors. Topics we will cover include: Thermal motion of carriers, Carrier motion under electric field, Drift current, Mobility and conductivity, ...

The single-layer nature of TMDs, tunable bandgap, and large intrinsic carrier mobility make them ideal for use in various advanced technologies. TMDs are part of a large family of layered ...